发明授权
- 专利标题： Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
- 专利标题（中）： 非晶硅的金属诱导结晶，由此制成的多晶硅薄膜和由其制造的薄膜晶体管
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申请号： US11413073申请日： 2006-04-27
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公开(公告)号： US08088676B2公开(公告)日： 2012-01-03
- 发明人: Man Wong , Hoi-Sing Kwok , Zhiguo Meng , Dongli Zhang , Xuejie Shi
- 申请人： Man Wong , Hoi-Sing Kwok , Zhiguo Meng , Dongli Zhang , Xuejie Shi
- 申请人地址： CN Hong Kong
- 专利权人： The Hong Kong University of Science and Technology
- 当前专利权人： The Hong Kong University of Science and Technology
- 当前专利权人地址： CN Hong Kong
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36
摘要：
Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.