发明授权
US08089115B2 Organic memory device with a charge storage layer and method of manufacture
有权
具有电荷存储层的有机存储器件及其制造方法
- 专利标题： Organic memory device with a charge storage layer and method of manufacture
- 专利标题（中）： 具有电荷存储层的有机存储器件及其制造方法
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申请号： US12302200申请日： 2007-05-22
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公开(公告)号： US08089115B2公开(公告)日： 2012-01-03
- 发明人: Wei Lin Leong , Pooi See Lee , Yeng Ming Lam , Lixin Song , Ebinazar Benjamin Namdas , G. Subodh Mhaisalkar
- 申请人： Wei Lin Leong , Pooi See Lee , Yeng Ming Lam , Lixin Song , Ebinazar Benjamin Namdas , G. Subodh Mhaisalkar
- 申请人地址： SG Singapore
- 专利权人： Nanyang Technological University
- 当前专利权人： Nanyang Technological University
- 当前专利权人地址： SG Singapore
- 代理机构： Dickstein Shapiro LLP
- 国际申请： PCT/SG2007/000141 WO 20070522
- 国际公布： WO2007/136350 WO 20071129
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.
公开/授权文献
- US20090146202A1 ORGANIC MEMORY DEVICE AND METHOD OF MANUFACTURE 公开/授权日：2009-06-11
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