公开(公告)号：US20090146202A1

公开(公告)日：2009-06-11

申请号：US12302200

申请日：2007-05-22

申请人： Wei Lin Leong ,  Pooi See Lee ,  Yeng Ming Lam ,  Lixin Song ,  Ebinazar Benjamin Namdas ,  G. Subodh Mhaisalkar

发明人： Wei Lin Leong ,  Pooi See Lee ,  Yeng Ming Lam ,  Lixin Song ,  Ebinazar Benjamin Namdas ,  G. Subodh Mhaisalkar

IPC分类号： H01L29/786 ,  H01L21/4763 ,  H01L21/8239

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/55 ,  G11C2213/56 ,  H01L21/28273 ,  H01L51/0529 ,  H01L51/0537 ,  Y10S977/783 ,  Y10S977/943

摘要： An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.

摘要翻译： 公开了一种有机存储器件，其具有活性层，有机电介质材料的膜的至少一个电荷存储层和介电材料膜上或电介质材料膜中的电荷存储材料的纳米颗粒和/或纳米颗粒。 通过有机介电膜的有机介电材料将纳米结构和/或纳米颗粒中的每一个与纳米结构和/或纳米颗粒中的其它纳米结构和/或纳米颗粒分离。 还公开了一种制造有机存储器件的方法。

公开(公告)号：US08089115B2

公开(公告)日：2012-01-03

申请号：US12302200

申请日：2007-05-22

申请人： Wei Lin Leong ,  Pooi See Lee ,  Yeng Ming Lam ,  Lixin Song ,  Ebinazar Benjamin Namdas ,  G. Subodh Mhaisalkar

发明人： Wei Lin Leong ,  Pooi See Lee ,  Yeng Ming Lam ,  Lixin Song ,  Ebinazar Benjamin Namdas ,  G. Subodh Mhaisalkar

IPC分类号： H01L29/788

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/55 ,  G11C2213/56 ,  H01L21/28273 ,  H01L51/0529 ,  H01L51/0537 ,  Y10S977/783 ,  Y10S977/943

摘要： An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.

摘要翻译： 公开了一种有机存储器件，其具有活性层，有机电介质材料的膜的至少一个电荷存储层和介电材料膜上或电介质材料膜中的电荷存储材料的纳米颗粒和/或纳米颗粒。 通过有机介电膜的有机介电材料将纳米结构和/或纳米颗粒中的每一个与纳米结构和/或纳米颗粒中的其它纳米结构和/或纳米颗粒分离。 还公开了一种制造有机存储器件的方法。

公开(公告)号：US08080822B2

公开(公告)日：2011-12-20

申请号：US12302155

申请日：2007-05-22

申请人： Ebinazar Benjamin Namdas ,  Tommy Cahyadi ,  G. Subodh Mhaisalkar ,  Pooi See Lee ,  Zhikuan Chen ,  Yeng Ming Lam ,  Lixin Song

发明人： Ebinazar Benjamin Namdas ,  Tommy Cahyadi ,  G. Subodh Mhaisalkar ,  Pooi See Lee ,  Zhikuan Chen ,  Yeng Ming Lam ,  Lixin Song

IPC分类号： H01L29/72

CPC分类号： H01L51/0525 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/107 ,  Y10S977/788 ,  Y10S977/936

摘要： A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film transistor incorporating the sol-gel film are also disclosed.

摘要翻译： 公开了一种用于制造用于薄膜晶体管的溶胶 - 凝胶膜组合物的方法。 该方法包括通过在60℃至225℃的温度下的溶液处理制造溶胶 - 凝胶电介质组合物。通过该方法制备的溶胶 - 凝胶膜和掺入溶胶 - 凝胶的有机薄膜晶体管 电影也被披露。

公开(公告)号：US20090267058A1

公开(公告)日：2009-10-29

申请号：US12302155

申请日：2007-05-22

申请人： Ebinazar Benjamin Namdas ,  Tommy Cahyadi ,  G. Subodh Mhaisalkar ,  Pooi See Lee ,  Zhikuan Chen ,  Yeng Ming Lam ,  Lixin Song

发明人： Ebinazar Benjamin Namdas ,  Tommy Cahyadi ,  G. Subodh Mhaisalkar ,  Pooi See Lee ,  Zhikuan Chen ,  Yeng Ming Lam ,  Lixin Song

IPC分类号： H01L51/30 ,  H01B3/00 ,  H01B3/18 ,  H01L51/40

CPC分类号： H01L51/0525 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/107 ,  Y10S977/788 ,  Y10S977/936

摘要： A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method BB includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film Si wafer Si wafer transistor incorporating the sol-gel film are also disclosed.

摘要翻译： 公开了一种用于制造用于薄膜晶体管的溶胶 - 凝胶膜组合物的方法。 方法BB包括通过在60℃至225℃的温度下的溶液处理制造溶胶 - 凝胶电介质组合物。通过该方法制备的溶胶 - 凝胶膜和有机薄膜Si晶片Si晶片晶体管 还公开了掺入溶胶 - 凝胶膜的方法。