Invention Grant
- Patent Title: Semiconductor device with a bulk single crystal on a substrate
- Patent Title (中): 在衬底上具有大块单晶的半导体器件
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Application No.: US12880458Application Date: 2010-09-13
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Publication No.: US08093671B2Publication Date: 2012-01-10
- Inventor: Arnab Basu , Max Robinson , Benjamin John Cantwell , Andy Brinkman
- Applicant: Arnab Basu , Max Robinson , Benjamin John Cantwell , Andy Brinkman
- Applicant Address: GB Sedgefield
- Assignee: Kromek Limited
- Current Assignee: Kromek Limited
- Current Assignee Address: GB Sedgefield
- Agency: Popovich, Wiles & O'Connell, P.A.
- Priority: GB0526072.4 20051221
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.
Public/Granted literature
- US20100327277A1 SEMICONDUCTOR DEVICE WITH A BULK SINGLE CRYSTAL ON A SUBSTRATE Public/Granted day:2010-12-30
Information query
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