发明授权
US08097299B2 Organic ruthenium compound for chemical vapor deposition, and chemical vapor deposition method using the organic ruthenium compound
有权
用于化学气相沉积的有机钌化合物和使用有机钌化合物的化学气相沉积方法
- 专利标题： Organic ruthenium compound for chemical vapor deposition, and chemical vapor deposition method using the organic ruthenium compound
- 专利标题（中）： 用于化学气相沉积的有机钌化合物和使用有机钌化合物的化学气相沉积方法
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申请号： US12091782申请日： 2007-09-27
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公开(公告)号： US08097299B2公开(公告)日： 2012-01-17
- 发明人: Junichi Taniuchi , Masayuki Saito , Minoru Ishida
- 申请人： Junichi Taniuchi , Masayuki Saito , Minoru Ishida
- 申请人地址： JP Tokyo
- 专利权人： Tanaka Kikinzoku Kogyo
- 当前专利权人： Tanaka Kikinzoku Kogyo
- 当前专利权人地址： JP Tokyo
- 代理机构： Roberts & Roberts, LLP
- 优先权： JPP2006-275215 20061006
- 国际申请： PCT/JP2007/068805 WO 20070927
- 国际公布： WO2008/044478 WO 20080417
- 主分类号： C23C16/06
- IPC分类号： C23C16/06 ; C23C16/18
摘要：
The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.
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