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US08097547B2 Sintered refactory material based on silicon carbide with a silicon nitride binder 有权
基于碳化硅与氮化硅粘合剂的烧结的重构材料

Sintered refactory material based on silicon carbide with a silicon nitride binder
摘要：
A sintered material based on silicon carbide (SiC) reactively sintered between 1,100° C. and 1,700° C. to form a silicon nitride binder (Si3N4), intended in particular for fabricating an aluminum electrolysis cell, including 0.05% to 1.5% of boron, the Si3N4/SiC weight ratio being in the range 0.05 to 0.45.
摘要（中）：

基于碳化硅（SiC）的烧结材料在1100℃和1,700℃之间反应烧结以形成氮化硅粘合剂（Si 3 N 4），特别用于制造铝电解槽，包括0.05％至1.5％的硼 ，Si 3 N 4 / SiC重量比在0.05〜0.45的范围内。

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