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    Dense Silicon Nitride Body Having High Strength, High Weibull Modulus and high fracture toughness
    4.
    发明申请
    Dense Silicon Nitride Body Having High Strength, High Weibull Modulus and high fracture toughness 有权
    具有高强度，高威布尔模量和高断裂韧性的密集氮化硅体

    公开(公告)号：US20120190530A1

    公开(公告)日：2012-07-26

    申请号：US12657455

    申请日：2010-01-21

    申请人： Biljana Mikijelj

    发明人： Biljana Mikijelj

    IPC分类号： C04B35/586 ,  B29C67/04

    CPC分类号： C04B35/584 ,  C04B35/593 ,  C04B35/5935 ,  C04B35/6261 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3873 ,  C04B2235/3895 ,  C04B2235/5409 ,  C04B2235/668 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607

    摘要： Silicon nitride materials with high strength, fracture toughness values, and Weibull moduli simultaneously, due to unique large grain reinforcing microstructures and well engineered grain boundary compositions. The invention demonstrates that, surprisingly and contrary to prior art, a silicon nitride material can be made which simultaneously has high strength above about 850-900 MPa, a Weibull above about 15 and high fracture toughness (above about 8 and 9 MPa·m1/2), and has reinforcing grains longer than 5 μm, typically longer than 10 μm in the microstructure without compromising its properties and reliability. The product of this invention can be processed using a variety of densification methods, including gas-pressure sintering, hot pressing, hot isostatic pressing, but is not limited to these, and does not require multiple heat treatments for all of these features to be achieved.

    摘要翻译： 由于独特的大颗粒增强微结构和精心设计的晶界组成，同时具有高强度，断裂韧性值和威布尔模量的氮化硅材料。 本发明表明，与现有技术相反，可以制造氮化硅材料，其同时具有高于约850-900MPa的高强度，高于约15的威布尔和高断裂韧性（高于约8和9MPa·m1 / 2），并且在不损害其性能和可靠性的情况下，在微结构中具有长于5μm的增强晶粒，通常长于10μm。 本发明的产品可以使用各种致密化方法进行加工，包括气压烧结，热压，热等静压，但不限于此，并且不需要多次热处理以实现所有这些特征 。

    TAPHOLE MIX
    5.
    发明申请
    TAPHOLE MIX 失效

    公开(公告)号：US20100304951A1

    公开(公告)日：2010-12-02

    申请号：US12446278

    申请日：2007-10-18

    申请人： Yutaka Kitazawa

    发明人： Yutaka Kitazawa

    IPC分类号： C04B35/586 ,  C04B35/567 ,  C04B35/52

    CPC分类号： C04B35/584 ,  B82Y30/00 ,  C04B33/04 ,  C04B35/18 ,  C04B35/528 ,  C04B35/62655 ,  C04B35/6316 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3427 ,  C04B2235/3463 ,  C04B2235/349 ,  C04B2235/3821 ,  C04B2235/3826 ,  C04B2235/3852 ,  C04B2235/3873 ,  C04B2235/405 ,  C04B2235/424 ,  C04B2235/425 ,  C04B2235/428 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/5454 ,  C04B2235/5472 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9669 ,  C21B7/125 ,  C21C5/4653

    摘要： It is intended to provide a taphole mix capable of forming SiC bonds with minimum of an excess and a deficiency in components thereof, and excellent in drillability. A fine particle fraction having a particle diameter of 75 μm or less is comprised of three components consisting of a silicon nitride-based material, a carbon-based material, and roseki, or comprised of the three component, and one or more selected from the group consisting of an alumina-based material, a silicon carbide-based material, a rare-earth element oxide-based material, clay, a high-purity silica-based material containing SiO2 in an amount of 80 mass % or more, a boron compound-based material in an amount of less than 0.3 mass % with respect to 100 mass % of the silicon nitride-based material, and a metal powder in an amount of less than 10 mass % with respect to 100 mass % of the carbon-based material. Further, a total amount of 100 mass % of the three components in the fine particle range consists of 51 to 74 mass % of the silicon nitride-based material, 15 to 35 mass % of the carbon-based material, and 10 to 30 mass % of the roseki.

    摘要翻译： 旨在提供一种能够以最小的过量和不足的组分形成SiC键的出孔混合物，并且具有优异的可钻性。 粒径为75μm以下的微细粒子组成由三
    种成分由氮化硅系材料，碳类材料和玫瑰红组成的三种成分构成，或由三种成分组成， 由氧化铝基材料，碳化硅基材料，稀土元素氧化物基材料，粘土，含有80质量％以上的SiO 2的高纯度二氧化硅系材料组成的组，硼 相对于氮化硅系材料的100质量％，小于0.3质量％的化合物系材料，相对于碳质材料100质量％，小于10质量％的金属粉末， 基材料。 此外，微粒范围中的三种成分的100质量％的总量由氮化硅系材料的51〜74质量％，碳系材料的15〜35质量％，碳系材料的10〜30质量％ 玫瑰花的百分比。

    Taphole mix
    7.
    发明授权
    Taphole mix 失效
    点孔混合

    公开(公告)号：US08163666B2

    公开(公告)日：2012-04-24

    申请号：US12446278

    申请日：2007-10-18

    申请人： Yutaka Kitazawa

    发明人： Yutaka Kitazawa

    IPC分类号： C04B35/586 ,  C04B35/52

    CPC分类号： C04B35/584 ,  B82Y30/00 ,  C04B33/04 ,  C04B35/18 ,  C04B35/528 ,  C04B35/62655 ,  C04B35/6316 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3427 ,  C04B2235/3463 ,  C04B2235/349 ,  C04B2235/3821 ,  C04B2235/3826 ,  C04B2235/3852 ,  C04B2235/3873 ,  C04B2235/405 ,  C04B2235/424 ,  C04B2235/425 ,  C04B2235/428 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/5454 ,  C04B2235/5472 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9669 ,  C21B7/125 ,  C21C5/4653

    摘要： It is intended to provide a taphole mix capable of forming SiC bonds with minimum of an excess and a deficiency in components thereof, and excellent in drillability. A fine particle fraction having a particle diameter of 75 μm or less is comprised of three components consisting of a silicon nitride-based material, a carbon-based material, and roseki, or comprised of the three component, and one or more selected from the group consisting of an alumina-based material, a silicon carbide-based material, a rare-earth element oxide-based material, clay, a high-purity silica-based material containing SiO2 in an amount of 80 mass % or more, a boron compound-based material in an amount of less than 0.3 mass % with respect to 100 mass % of the silicon nitride-based material, and a metal powder in an amount of less than 10 mass % with respect to 100 mass % of the carbon-based material. Further, a total amount of 100 mass % of the three components in the fine particle range consists of 51 to 74 mass % of the silicon nitride-based material, 15 to 35 mass % of the carbon-based material, and 10 to 30 mass % of the roseki.

    摘要翻译： 旨在提供一种能够以最小的过量和不足的组分形成SiC键的出孔混合物，并且具有优异的可钻性。 粒径为75μm以下的微细粒子组成由三
    种成分由氮化硅系材料，碳类材料和玫瑰红组成的三种成分构成，或由三种成分组成， 由氧化铝基材料，碳化硅基材料，稀土元素氧化物基材料，粘土，含有80质量％以上的SiO 2的高纯度二氧化硅系材料组成的组，硼 相对于氮化硅系材料的100质量％，小于0.3质量％的化合物系材料，相对于碳质材料100质量％，小于10质量％的金属粉末， 基材料。 此外，微粒范围中的三种成分的100质量％的总量由氮化硅系材料的51〜74质量％，碳系材料的15〜35质量％，碳系材料的10〜30质量％ 玫瑰花的百分比。

    USE OF ADDITIVES TO IMPROVE MICROSTRUCTURES AND FRACTURE RESISTANCE OF SILICON NITRIDE CERAMICS
    9.
    发明申请
    USE OF ADDITIVES TO IMPROVE MICROSTRUCTURES AND FRACTURE RESISTANCE OF SILICON NITRIDE CERAMICS 有权
    使用添加剂改善硅酸盐陶瓷的微结构和耐断裂性

    公开(公告)号：US20100267543A1

    公开(公告)日：2010-10-21

    申请号：US11851540

    申请日：2007-09-07

    申请人： PAUL F. BECHER ,  HUA-TAY LIN

    发明人： PAUL F. BECHER ,  HUA-TAY LIN

    IPC分类号： C04B35/586

    CPC分类号： C04B35/593 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3418 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/428 ,  C04B2235/46 ,  C04B2235/5276 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/766 ,  C04B2235/767 ,  C04B2235/78 ,  C04B2235/786 ,  C04B2235/787 ,  C04B2235/788 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96

    摘要： A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

    摘要翻译： 一种高强度，耐断裂的氮化硅陶瓷材料，其包括约5至约75重量％的β-氮化硅的细长增强晶粒，约20至约95重量％的β-氮化硅细颗粒，其中 细晶粒具有小于约1微米的长轴; 和约1至约15重量％的包含Si，N，O，稀土元素和二次致密化元素的无定形晶间相。 细长的增强颗粒具有2:1或更大的纵横比和约1微米或更大的长轴。 细长的增强颗粒在陶瓷微结构内基本上是各向同性地取向的。 氮化硅陶瓷的室温挠曲强度为1000MPa以上，断裂韧性为9MPa-m（1/2）以上。 氮化硅陶瓷在1200℃下表现出800MPa以上的峰值强度。还包括制造具有上述高挠曲强度和抗断裂值的氮化硅陶瓷材料的方法。