发明授权
- 专利标题： Method of forming programmable anti-fuse element
- 专利标题（中）： 形成可编程反熔丝元件的方法
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申请号： US12319104申请日： 2008-12-30
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公开(公告)号： US08101471B2公开(公告)日： 2012-01-24
- 发明人: Walid M. Hafez , Chia-Hong Jan , Jie-Feng Lin , Chetan Prasad , Sangwoo Pae , Zhanping Chen , Anisur Rahman
- 申请人： Walid M. Hafez , Chia-Hong Jan , Jie-Feng Lin , Chetan Prasad , Sangwoo Pae , Zhanping Chen , Anisur Rahman
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Laleh Jalali
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
A programmable anti-fuse element includes a substrate (224), an N-well (426) in the substrate, an electrically insulating layer (427) over the N-well, and a gate electrode (430) over the electrically insulating layer. The gate electrode has n-type doping so that the N-well is able to substantially contain within its boundaries a current generated following a programming event of the programmable anti-fuse element. In the same or another embodiment, a twice-programmable fuse element (100) includes a metal gate fuse (110) and an oxide anti-fuse (120) such as the programmable anti-fuse element just described.
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