发明授权
US08101515B2 Methods of manufacturing semiconductor devices having contact plugs in insulation layers
有权
制造在绝缘层中具有接触插塞的半导体器件的方法
- 专利标题： Methods of manufacturing semiconductor devices having contact plugs in insulation layers
- 专利标题（中）： 制造在绝缘层中具有接触插塞的半导体器件的方法
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申请号： US12766137申请日： 2010-04-23
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公开(公告)号： US08101515B2公开(公告)日： 2012-01-24
- 发明人: Joon-ho Sung , Ju-yong Lee , Mi-kyung Park , Tae-young Chung
- 申请人： Joon-ho Sung , Ju-yong Lee , Mi-kyung Park , Tae-young Chung
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec
- 优先权： KR10-2007-0106740 20071023
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44 ; H01L21/60 ; H01L21/74 ; H01L21/8238 ; H01L21/8234 ; H01L21/8242 ; H01L21/20
摘要：
Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.
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