发明授权
- 专利标题： Thin film transistor having a plurality of carbon nanotubes
- 专利标题（中）： 具有多个碳纳米管的薄膜晶体管
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申请号： US12384329申请日： 2009-04-02
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公开(公告)号： US08101953B2公开(公告)日： 2012-01-24
- 发明人: Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
- 申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
- 申请人地址： CN Beijing TW Tu-Cheng, New Taipei
- 专利权人： Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人： Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址： CN Beijing TW Tu-Cheng, New Taipei
- 代理机构： Altis Law Group, Inc.
- 优先权： CN200810067172 20080514
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/76 ; H01L31/036 ; H01L31/112 ; H01L27/108 ; H01L29/04 ; H01L29/12 ; H01L31/0376 ; H01L31/20
摘要：
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes at least two stacked carbon nanotube films. Each carbon nanotube film includes an amount of carbon nanotubes. At least a part of the carbon nanotubes of each carbon nanotube film are aligned along a direction from the source electrode to the drain electrode.
公开/授权文献
- US20090283754A1 Thin film transistor 公开/授权日：2009-11-19
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