发明授权
- 专利标题： Semiconductor device including through electrode and method of manufacturing the same
- 专利标题（中）： 包括通孔电极的半导体器件及其制造方法
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申请号： US11842973申请日： 2007-08-22
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公开(公告)号： US08102049B2公开(公告)日： 2012-01-24
- 发明人: Nobuaki Takahashi , Masahiro Komuro , Koji Soejima , Satoshi Matsui , Masaya Kawano
- 申请人： Nobuaki Takahashi , Masahiro Komuro , Koji Soejima , Satoshi Matsui , Masaya Kawano
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2006-229923 20060825
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region.
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