发明授权
US08102318B2 Inverted-F antenna with bandwidth enhancement for electronic devices 有权
倒置F天线,具有电子设备带宽增强

  • 专利标题: Inverted-F antenna with bandwidth enhancement for electronic devices
  • 专利标题(中): 倒置F天线,具有电子设备带宽增强
  • 申请号: US12401594
    申请日: 2009-03-10
  • 公开(公告)号: US08102318B2
    公开(公告)日: 2012-01-24
  • 发明人: Bing ChiangEnrique Ayala Vazquez
  • 申请人: Bing ChiangEnrique Ayala Vazquez
  • 申请人地址: US CA Cupertino
  • 专利权人: Apple Inc.
  • 当前专利权人: Apple Inc.
  • 当前专利权人地址: US CA Cupertino
  • 代理机构: Treyz Law Group
  • 代理商 G. Victor Treyz; David C. Kellogg
  • 主分类号: H01Q1/38
  • IPC分类号: H01Q1/38
Inverted-F antenna with bandwidth enhancement for electronic devices
摘要:
An inverted-F antenna is provided that has a resonating element arm and a ground element. A shorting branch of the resonating element arm shorts the resonating element arm to the ground element. An antenna feed that receives a transmission line is coupled to the resonating element arm and the ground element. One or more impedance discontinuity structures are formed along the resonating element arm at locations that are between the shorting branch and the antenna feed. The impedance discontinuity structures may include shorting structures and capacitance discontinuity structures. The impedance discontinuity structures may be formed by off-axis vertical conductors such as vias that pass through a dielectric layer separating the antenna resonating element arm from the ground element. Capacitance discontinuity structures may be formed from hollowed portions of the dielectric or other dielectric portions with a dielectric constant that differs from that of the dielectric layer.
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