发明授权
US08106440B2 Selective high-k dielectric film deposition for semiconductor device
有权
用于半导体器件的选择性高k介电膜沉积
- 专利标题： Selective high-k dielectric film deposition for semiconductor device
- 专利标题（中）： 用于半导体器件的选择性高k介电膜沉积
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申请号： US12632753申请日： 2009-12-07
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公开(公告)号： US08106440B2公开(公告)日： 2012-01-31
- 发明人: Willy Rachmady , Marko Radosavljevic , Mantu K. Hudait , Matthew V Metz
- 申请人： Willy Rachmady , Marko Radosavljevic , Mantu K. Hudait , Matthew V Metz
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
Embodiments of the present invention describe a method of fabricating a III-V quantum well transistor with low current leakage and high on-to-off current ratio. A hydrophobic mask having an opening is formed on a semiconductor film. The opening exposes a portion on the semiconductor film where a dielectric layer is desired to be formed. A hydrophilic surface is formed on the exposed portion of the semiconductor film. A dielectric layer is then formed on the hydrophilic surface by using an atomic layer deposition process. A metal layer is deposited on the dielectric layer.
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