发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12142869申请日: 2008-06-20
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公开(公告)号: US08106475B2公开(公告)日: 2012-01-31
- 发明人: Yoshinori Kitamura , Koichi Matsuno , Kazunori Nishikawa
- 申请人: Yoshinori Kitamura , Koichi Matsuno , Kazunori Nishikawa
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2005-162884 20050602
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; H01L21/762
摘要:
A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively. The coating-type oxide films are not buried in the second element isolation insulating trenches.