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公开(公告)号：US07402499B2
公开(公告)日：2008-07-22
申请号：US11445373
申请日：2006-06-02
IPC分类号： H01L21/76
CPC分类号： H01L29/7881 , H01L21/76224 , H01L27/105 , H01L27/11526 , H01L27/11541 , H01L29/66825
摘要： A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively.
摘要翻译： 一种半导体器件包括形成有多个具有第一开口宽度的第一元件隔离沟槽和具有比第一开口宽度更大的开口宽度的多个第二元件隔离沟槽的半导体衬底，埋在第一元件隔离沟槽中的元件隔离绝缘膜 使得沟槽的上部分别具有部分开口并分别埋在第二元件隔离沟槽中，并且分别形成为填充第一元件隔离沟槽的开口的涂覆型氧化物膜。
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公开(公告)号：US20060275999A1
公开(公告)日：2006-12-07
申请号：US11445373
申请日：2006-06-02
IPC分类号： H01L21/76 , H01L23/544
CPC分类号： H01L29/7881 , H01L21/76224 , H01L27/105 , H01L27/11526 , H01L27/11541 , H01L29/66825
摘要： A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively.
摘要翻译： 一种半导体器件包括形成有多个具有第一开口宽度的第一元件隔离沟槽和具有比第一开口宽度更大的开口宽度的多个第二元件隔离沟槽的半导体衬底，埋在第一元件隔离沟槽中的元件隔离绝缘膜 使得沟槽的上部分别具有部分开口并分别埋在第二元件隔离沟槽中，并且分别形成为填充第一元件隔离沟槽的开口的涂覆型氧化物膜。
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公开(公告)号：US08106475B2
公开(公告)日：2012-01-31
申请号：US12142869
申请日：2008-06-20
IPC分类号： H01L21/76 , H01L21/762
CPC分类号： H01L29/7881 , H01L21/76224 , H01L27/105 , H01L27/11526 , H01L27/11541 , H01L29/66825
摘要： A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively. The coating-type oxide films are not buried in the second element isolation insulating trenches.
摘要翻译： 一种半导体器件包括形成有多个具有第一开口宽度的第一元件隔离沟槽和具有比第一开口宽度更大的开口宽度的多个第二元件隔离沟槽的半导体衬底，埋在第一元件隔离沟槽中的元件隔离绝缘膜 使得沟槽的上部分别具有部分开口并分别埋在第二元件隔离沟槽中，并且分别形成为填充第一元件隔离沟槽的开口的涂覆型氧化物膜。 涂层型氧化物膜不会埋在第二元件隔离绝缘沟槽中。
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公开(公告)号：US20100072210A1
公开(公告)日：2010-03-25
申请号：US12312923
申请日：2007-10-31
CPC分类号： F25D23/067 , B29C44/1261 , F16B37/122 , F25D2201/126 , Y10T29/49826 , Y10T428/24322
摘要： A multi-layered panel wherein an interlayer material in a fluid state or in a solidified state transformed therefrom is provided between a pair of panels, comprises an internally-threaded member fitted in a through-hole formed in an outer one of the panels, and a cap capped on the internally-threaded member. The cap has a bottomed tubular-shaped body portion adapted to be brought into close contact with an outer peripheral surface of the internally-threaded member while sealing a threaded hole of the internally-threaded member, and a panel-contact contributing portion supported by the body portion, and adapted to be, at least partly, closely contactable with the outer panel.
摘要翻译： 一种多层面板，其中在一对面板之间设置有流体状态或固化状态的中间层材料，其包括装配在形成在所述面板的外侧的通孔中的内螺纹构件，以及 一个盖在内螺纹构件上的盖子。 盖具有有底的管状主体部分，其适于在密封内螺纹构件的螺纹孔的同时与内螺纹构件的外周表面紧密接触，并且面板接触作用部分由 主体部分，并且适于至少部分地与外板紧密接触。
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公开(公告)号：US5521636A
公开(公告)日：1996-05-28
申请号：US456406
申请日：1995-06-01
CPC分类号： G06T3/4007 , G06F17/17 , H04N5/208 , H04N5/21 , H04N5/2628 , H04N9/045 , H04N2209/046
摘要： An image pickup apparatus includes an image sensor for simultaneously reading signals of adjoining two horizontal pixel rows by one-time horizontal scan; an electronic zoom circuit for enlargement-processing an output signal of the image sensor; an operation switch for instructing for on/off control of electronic zoom operation; and a scan method switching circuit for controlling scan method of the image sensor according to with an instruction from the operation switch. The scan method switching circuit exerts control so that, when the electronic zoom operation is turned on, a pair of two horizontal pixel rows to be read simultaneously in the odd and even fields are made identical, and when the electronic zoom operation is turned off, a pair of two horizontal pixel rows to be read simultaneously in the odd and even fields are shifted by one row in the vertical direction. In this image pickup apparatus, the positions of lines having high vertical frequency responses and those of lines having low vertical frequency responses are approximately reversed between the odd and even fields, so that the vertical frequency response is made uniform over the entire screen as a one-frame image.
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公开(公告)号：US5144399A
公开(公告)日：1992-09-01
申请号：US713154
申请日：1991-06-11
IPC分类号： H04N5/243 , H04N5/208 , H04N5/335 , H04N5/355 , H04N5/365 , H04N5/369 , H04N5/378 , H04N9/04 , H04N9/07 , H04N9/64
摘要： A color image pickup apparatus for correcting the sharpness of the luminance signal in a color image pickup system for taking out as different color signals for each of the horizontal lines the color information from the objects to be photographed with the use of a color image sensor having a color filter arrangement, whereby it is capable of correcting it even when the signals are saturated in the image sensor and the signal level between the adjacent two horizontal lines has been different in spite of the photographing the object which is the same in the signal level between two adjacent horizontal lines.
摘要翻译： 一种彩色图像拾取装置，用于校正彩色图像拾取系统中的亮度信号的清晰度，用于取出作为每个水平线的不同颜色信号，使用具有彩色图像传感器的待拍摄对象的颜色信息， 即使在图像传感器中的信号饱和并且相邻的两条水平线之间的信号电平已经不同的情况下，即使在信号级别相同的对象被拍摄，也能够对其进行校正 在两条相邻的水平线之间。
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公开(公告)号：US4701784A
公开(公告)日：1987-10-20
申请号：US829135
申请日：1986-01-31
CPC分类号： H04N5/367
摘要： A defect correction apparatus includes a memory having information of image failure of a solid state imaging device, a coincidence detection circuit for detecting a position of pixel having a failure at the time of image pick up, and a failure correction circuit. The failure correction circuit includes structure for producing plural signals for correction of signals of pixels around the pixel having the failure, and structure for selecting an optimum one from the produced plural signals, for correction responding to condition of the image and signals of the pixel therearound, and to use the selected optimum signal for correction by switching for the signal of the failure pixel.
摘要翻译： PCT No.PCT / JP85 / 00300 Sec。 371日期1986年1月31日 102（e）日期1986年1月31日PCT提交1985年5月30日PCT公布。 公开号WO85 / 05752 日期：1985年12月19日。缺陷修正装置包括具有固态成像装置的图像故障信息的存储器，用于检测图像拾取时具有故障的像素的位置的重合检测电路和故障 校正电路。 故障校正电路包括用于产生用于校正具有故障的像素周围的像素的信号的多个信号的结构，以及用于从所产生的多个信号中选择最佳像素的结构，用于根据图像的条件和其周围的像素的信号进行校正 并且通过切换故障像素的信号来使用所选择的最佳信号进行校正。
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8.发明授权Solid state color imaging apparatus producing chrominance and luminance signals from unsaturated ores of n color signals 失效固态彩色成像装置产生来自n色信号的不饱和矿石的色度和亮度信号
公开(公告)号：US4680623A
公开(公告)日：1987-07-14
申请号：US700382
申请日：1985-02-11
CPC分类号： H04N9/045
摘要： In a color imaging apparatus having a single chip solid state state sensor and an n color filter matrix, n color signals are used by an operation circuit in a first signal processing mode to generate chrominance signals and a luminance signal. When one of the n color signals reaches a saturation level, the operation circuit utilizes the remaining n-1 color signals. When a second color signal reaches the saturation level, a compensation signal is generated from a particular non-saturated color signal and the operation circuit utilizes the remaining n-2 non-saturated signals, including the particular non-saturated signal, and the compensation signal to produce the chrominance signals and the luminance signal. Compensation signals are generated from the particular signal until the particular color signal saturates. The particular color signal saturates last.
摘要翻译： 在具有单芯片固态状态传感器和n色滤波器矩阵的彩色成像装置中，在第一信号处理模式中由运算电路使用n色信号来产生色度信号和亮度信号。 当n个彩色信号之一达到饱和水平时，运算电路利用剩余的n-1个彩色信号。 当第二颜色信号达到饱和电平时，从特定的非饱和色彩信号产生补偿信号，并且操作电路利用剩余的n-2个非饱和信号，包括特定的非饱和信号和补偿信号 以产生色度信号和亮度信号。 从特定信号产生补偿信号，直到特定的颜色信号饱和。 特定的颜色信号最后饱和。
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9.发明申请Casing Structure for Refrigeration System and Sealing Method for Refrigeration System Casing 审中-公开制冷系统套管结构及制冷系统套管密封方法公开(公告)号：US20090133420A1
公开(公告)日：2009-05-28
申请号：US11992580
申请日：2006-09-13
CPC分类号： F16L5/02 , B60H1/00514 , F16L5/14 , F25D19/003 , F25D23/068 , Y10T29/53
摘要： A casing (11) for use in a freezing container is provided with a through hole (H) for insertion of the piping of a refrigerant circuit therethrough. Each opening end of the through hole (H) is covered over with a respective mesh sheet (31, 32). With each opening end of the through hole (H) covered over with the mesh sheet (31, 32), the tip end of a filling nozzle (33) is inserted until it reaches the middle of the through hole (H) and a sealant material is injected. The injected sealant material is held back within the through hole (H) by each mesh sheet (31, 32) and, with the progress of the injection of the sealant material, the air present in the through hole (H) is purged out through each mesh sheet (31, 32).
摘要翻译： 用于冷冻容器的壳体（11）设置有用于插入制冷剂回路的管道的通孔（H）。 通孔（H）的每个开口端用相应的网片（31,32）覆盖。 在通孔（H）的每个开口端用网片（31,32）覆盖的情况下，插入填充喷嘴（33）的前端直到其到达通孔（H）的中间，并且密封剂 材料被注入。 注入的密封剂材料通过每个网片（31,32）保持在通孔（H）内，并且随着密封剂材料的注入的进行，存在于通孔（H）中的空气通过 每个网片（31,32）。
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公开(公告)号：US06969884B2
公开(公告)日：2005-11-29
申请号：US10728928
申请日：2003-12-08
IPC分类号： H01L21/00 , H01L21/28 , H01L21/331 , H01L21/82 , H01L21/8222 , H01L21/8247 , H01L27/115 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
摘要翻译： 公开了一种半导体器件，包括半导体衬底，该半导体衬底包括由隔离沟槽分隔开的第一和第二元件形成区域，形成在第一和第二元件形成区域上的第一和第二下部栅极绝缘膜，形成在第一和第二元件形成区域上的第一和第二浮置栅极 和第二下栅极绝缘膜，隔离绝缘膜，至少形成在所述隔离沟槽中，并且在其上表面上形成有凹部，形成在所述第一和第二浮栅上的上栅极绝缘膜，以及控制栅极线， 与第一和第二浮动栅极相对的相对部分，其中上部栅极绝缘膜被插入，并且位于凹部内部的部分，第一浮动栅极包括与第二浮动栅极相对的侧表面，并且与包括的侧表面完全对准 在第一元件形成区域中并由隔离沟槽限定。
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