Invention Grant
US08107271B2 Termination circuits and semiconductor memory devices having the same
有权
终端电路和具有该终端电路的半导体存储器件
- Patent Title: Termination circuits and semiconductor memory devices having the same
- Patent Title (中): 终端电路和具有该终端电路的半导体存储器件
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Application No.: US11649805Application Date: 2007-01-05
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Publication No.: US08107271B2Publication Date: 2012-01-31
- Inventor: Kwang-Soo Park , Jae-Jun Lee , Jong-Hoon Kim , Hoe-Ju Chung
- Applicant: Kwang-Soo Park , Jae-Jun Lee , Jong-Hoon Kim , Hoe-Ju Chung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0016227 20060220
- Main IPC: G11C5/06
- IPC: G11C5/06
Abstract:
A termination circuit is connected to an input buffer receiving a data signal, and includes at least one termination resistor connected to the input buffer for impedance matching. At least one switch controls a connection between the input buffer and a corresponding one of the at least one termination resistors. A control signal generator generates a control signal for selectively enabling the termination circuit by controlling each of the at least one switches. The control signal has an input period less than or equal to an input period of a data signal.
Public/Granted literature
- US20070205848A1 Termination circuits and semiconductor memory devices having the same Public/Granted day:2007-09-06
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