A nonvolatile memory device using a variable resistive element is provided. The nonvolatile memory device includes first and second nonvolatile memory cells. Word lines are coupled to the first and second nonvolatile memory cells. First and second bit lines are coupled to the first and second nonvolatile memory cells, respectively. A read circuit reads resistance levels of the first and second nonvolatile memory cells by providing first and second read bias currents of different levels to the first and second bit lines, respectively.