发明授权
- 专利标题： Double-sided nano-imprint lithography system
- 专利标题（中）： 双面纳米压印光刻系统
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申请号： US12684538申请日： 2010-01-08
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公开(公告)号： US08109753B2公开(公告)日： 2012-02-07
- 发明人: Byung-Jin Choi , Sidlgata V. Sreenivasan
- 申请人： Byung-Jin Choi , Sidlgata V. Sreenivasan
- 申请人地址： US TX Austin
- 专利权人： Molecular Imprints, Inc.
- 当前专利权人： Molecular Imprints, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Cameron A. King
- 主分类号： B29C59/00
- IPC分类号： B29C59/00 ; B28B17/00
摘要：
A nano-imprint lithography system is described for patterning first and second substrates, the system includes a translation stage constructed to alternatively place substrate chucks in position with respect to a nano-imprint mold assembly such that the nano-imprint mold assembly may imprint a pattern on one of the substrates, while concurrently obtaining a desired spatial relationship for the remaining substrate.
公开/授权文献
- US20100112116A1 Double-Sided Nano-Imprint Lithography System 公开/授权日：2010-05-06
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