发明授权
US08110493B1 Pulsed PECVD method for modulating hydrogen content in hard mask
有权
用于调制硬掩模中氢含量的脉冲PECVD方法
- 专利标题： Pulsed PECVD method for modulating hydrogen content in hard mask
- 专利标题（中）： 用于调制硬掩模中氢含量的脉冲PECVD方法
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申请号： US12048967申请日： 2008-03-14
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公开(公告)号： US08110493B1公开(公告)日： 2012-02-07
- 发明人: Pramod Subramonium , Zhiyuan Fang , Jon Henri
- 申请人： Pramod Subramonium , Zhiyuan Fang , Jon Henri
- 申请人地址： US CA San Jose
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for forming a PECVD deposited amorphous carbon or ashable hard mask (AHM) in a trench or a via with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks with high selectivity and little or no hard mask on the sidewalls. The deposition method utilizes a pulsed precursor delivery with a plasma etch while the precursor flow is off.
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