公开(公告)号：US20130323930A1

公开(公告)日：2013-12-05

申请号：US13482786

申请日：2012-05-29

申请人： Kaushik Chattopadhyay ,  George A. Antonelli ,  Pramod Subramonium ,  Mandyam Sriram ,  Tighe A. Spurlin

发明人： Kaushik Chattopadhyay ,  George A. Antonelli ,  Pramod Subramonium ,  Mandyam Sriram ,  Tighe A. Spurlin

IPC分类号： H01L21/02

CPC分类号： H01L21/02107 ,  H01L21/02074 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883

摘要： Provided are methods and systems for forming air gaps in an interconnect layer between adjacent conductive lines. Protective layers may be selectively formed on exposed surfaces of the conductive lines, while structures in between the lines may remain unprotected. These structures may be made from a sacrificial material that is later removed to form voids. In certain embodiments, the structures are covered with a permeable non-protective layer that allows etchants and etching products to pass through during removal. When a work piece having a selectively formed protective layer is exposed to gas or liquid etchants, these etchants remove the sacrificial material without etching or otherwise impacting the metal lines. Voids formed in between these lines may be then partially filled with a dielectric material to seal the voids and/or protect sides of the metal lines. Additional interconnect layers may be formed above the processed layer containing air gaps.

摘要翻译： 提供了用于在相邻导电线之间的互连层中形成气隙的方法和系统。 可以在导电线的暴露表面上选择性地形成保护层，而线之间的结构可以保持不受保护。 这些结构可以由稍后去除以形成空隙的牺牲材料制成。 在某些实施方案中，结构被可渗透的非保护层覆盖，其允许蚀刻剂和蚀刻产物在去除期间通过。 当具有选择性形成的保护层的工件暴露于气体或液体蚀刻剂时，这些蚀刻剂在不蚀刻或以其他方式冲击金属线的情况下去除牺牲材料。 然后可以在这些线之间形成的空隙部分地填充有电介质材料以密封空隙和/或保护金属线的侧面。 附加的互连层可以形成在包含气隙的处理层之上。

公开(公告)号：US08591659B1

公开(公告)日：2013-11-26

申请号：US12355601

申请日：2009-01-16

申请人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

发明人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

IPC分类号： B08B9/08

CPC分类号： B08B7/0035 ,  B08B9/00 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).

摘要翻译： 提供了用于从沉积反应器的内表面除去残留物的改进的方法和装置。 这些方法涉及通过在远程等离子体发生器中产生清洁试剂自由基，然后在将清洁试剂混合物引入沉积室的同时进一步输送原位等离子体能量来增加沉积室内清洗剂自由基的可用性。 某些实施方案涉及多级方法，其包括其中以高压（例如，约0.6托或更高）引入清洗剂混合物的阶段，以及在低压（例如约0.6）下引入清洗试剂混合物的阶段 乇以下）。

公开(公告)号：US08637411B2

公开(公告)日：2014-01-28

申请号：US13242084

申请日：2011-09-23

申请人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/311

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US08288292B2

公开(公告)日：2012-10-16

申请号：US12750180

申请日：2010-03-30

申请人： George Andrew Antonelli ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Pramod Subramonium

发明人： George Andrew Antonelli ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Pramod Subramonium

IPC分类号： H01L21/469

CPC分类号： H01L21/02112 ,  C23C16/342 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0234 ,  H01L29/4983 ,  H01L29/517 ,  H01L29/665 ,  H01L29/7843

摘要： A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower than silicon nitride.

摘要翻译： 形成氮化硼或氮化硼介质的方法产生没有负载效应的共形层。 介电层通过基板上的含硼膜的化学气相沉积（CVD）形成，至少部分沉积不经等离子体进行，然后将沉积的含硼膜暴露于等离子体。 CVD组件主导沉积过程，产生不带负载效应的保形膜。 电介质是可灰化的，并且可以用氢等离子体除去而不会影响周围的材料。 与其它前端间隔物或诸如氧化硅或氮化硅的硬掩模材料相比，电介质具有低得多的湿蚀刻速率，并且具有比氮化硅低得多的介电常数。

公开(公告)号：US20120028454A1

公开(公告)日：2012-02-02

申请号：US13242084

申请日：2011-09-23

申请人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/225 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US07915166B1

公开(公告)日：2011-03-29

申请号：US11710652

申请日：2007-02-22

申请人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

发明人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867

摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

摘要翻译： 在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。 密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。 具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅） 。 这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

公开(公告)号：US08669181B1

公开(公告)日：2014-03-11

申请号：US13032392

申请日：2011-02-22

申请人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

发明人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

IPC分类号： H01L21/44

CPC分类号： H01L21/3212 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867

摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

摘要翻译： 在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。 密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。 具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅） 。 这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

公开(公告)号：US20130040447A1

公开(公告)日：2013-02-14

申请号：US13607386

申请日：2012-09-07

申请人： Shankar Swaminathan ,  Mandyam Sriram ,  Bart van Schravendijk ,  Pramod Subramonium ,  Adrien La Voie

发明人： Shankar Swaminathan ,  Mandyam Sriram ,  Bart van Schravendijk ,  Pramod Subramonium ,  Adrien La Voie

IPC分类号： H01L21/225 ,  B05C9/02 ,  B05C11/00

CPC分类号： C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348 ,  H01L21/2255 ,  H01L21/76831 ,  H01L21/76898 ,  H01L29/66803

摘要： Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.

摘要翻译： 这里公开的是在反应室中掺杂图案化衬底的方法。 所述方法可以包括形成第一共形膜层，其具有包括掺杂剂的掺杂剂源，并将一些掺杂剂驱动到衬底中以形成共形掺杂分布。 在一些实施方案中，形成第一膜层可以包括将掺杂剂前体引入反应室，在其形成吸附限制层的条件下吸附掺杂剂前体，并使吸附的掺杂剂前体反应形成掺杂剂源。 还公开了用于掺杂衬底的装置，其可以包括反应室，气体入口和具有机器可读代码的控制器，其具有包括用于操作气体入口以将掺杂剂前体引入反应室以使其被吸附的指令，以及指令 用于使吸附的掺杂剂前体反应以形成含有掺杂剂源的膜层。

公开(公告)号：US08268722B2

公开(公告)日：2012-09-18

申请号：US12688154

申请日：2010-01-15

申请人： Jengyi Yu ,  Hui-Jung Wu ,  Girish Dixit ,  Bart van Schravendijk ,  Pramod Subramonium ,  Gengwei Jiang ,  George Andrew Antonelli ,  Jennifer O'loughlin

发明人： Jengyi Yu ,  Hui-Jung Wu ,  Girish Dixit ,  Bart van Schravendijk ,  Pramod Subramonium ,  Gengwei Jiang ,  George Andrew Antonelli ,  Jennifer O'loughlin

IPC分类号： H01L21/4763 ,  H01L29/40

CPC分类号： H01L21/76834 ,  H01L21/02074 ,  H01L21/76832 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76888

摘要： Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH3, H2, N2, and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

摘要翻译： 使用驻留在金属线和电介质扩散阻挡层（或蚀刻停止）层之间的界面处的粘合层来改善互连的电迁移性能。 通过在暴露的铜线上沉积含金属材料（例如，含有Al，Ti，Ca，Mg等的材料）的前体层，并将前体层转化为钝化层（例如，氮化层 ）。 例如，含有暴露的Cu-O键的暴露的铜线的基板与三甲基铝接触以形成在铜表面上具有Al-O键和Al-C键的前体层。 然后处理前体层以除去残留的有机取代基并形成Al-N，Al-H键或两者。 处理可以包括直接等离子体处理，远程等离子体处理，UV处理和用诸如NH 3，H 2，N 2的气体及其混合物的热处理。 然后沉积介电扩散阻挡层。

公开(公告)号：US08110493B1

公开(公告)日：2012-02-07

申请号：US12048967

申请日：2008-03-14

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/4763

CPC分类号： C23C16/26 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332

摘要： A method for forming a PECVD deposited amorphous carbon or ashable hard mask (AHM) in a trench or a via with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks with high selectivity and little or no hard mask on the sidewalls. The deposition method utilizes a pulsed precursor delivery with a plasma etch while the precursor flow is off.

摘要翻译： 在低于500℃（例如约400℃）的过程温度下，在沟槽或通孔中形成具有小于30％H含量的PECVD沉积的无定形碳或可灰化硬掩模（AHM）的方法产生低H含量 具有高选择性的硬掩模和侧壁上的很少或没有硬掩模。 沉积方法利用等离子体蚀刻的脉冲前驱物传输，同时前体流离开。