发明授权
US08114220B2 Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
有权
用于从微电子器件清洗离子注入的光致抗蚀剂层的制剂
- 专利标题： Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
- 专利标题（中）： 用于从微电子器件清洗离子注入的光致抗蚀剂层的制剂
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申请号： US11911616申请日： 2006-04-14
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公开(公告)号： US08114220B2公开(公告)日： 2012-02-14
- 发明人: Pamela M. Visintin , Michael B. Korzenski , Thomas H. Baum
- 申请人： Pamela M. Visintin , Michael B. Korzenski , Thomas H. Baum
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Moore & Van Allen, PLLC
- 代理商 Tristan A. Fuierer; Rosa Yaghmour
- 国际申请： PCT/US2006/014407 WO 20060414
- 国际公布： WO2006/113621 WO 20061026
- 主分类号： B08B3/04
- IPC分类号： B08B3/04 ; C11D1/00 ; C11D3/28 ; C11D3/26
摘要：
A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.