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1.发明申请FORMULATIONS FOR REMOVING COOPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES 审中-公开用于从微电子设备中去除合成的后置残留物的配方公开(公告)号：US20090301996A1
公开(公告)日：2009-12-10
申请号：US12093125
申请日：2006-11-07
CPC分类号： C11D11/0047 , C11D3/0073 , H01L21/02063
摘要： A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.
摘要翻译： 描述了用于从图案化的微电子器件去除含铜的后蚀刻和/或后灰渣的方法和组合物。 除去组合物包括稀释剂，溶剂和铜缓蚀剂，其中稀释剂可以是致密流体或液体溶剂。 去除组合物有效地从微电子器件去除含铜的蚀刻后残留物，而不损害暴露的低k电介质和金属互连材料。
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2.发明授权Formulations for cleaning ion-implanted photoresist layers from microelectronic devices 有权用于从微电子器件清洗离子注入的光致抗蚀剂层的制剂公开(公告)号：US08114220B2
公开(公告)日：2012-02-14
申请号：US11911616
申请日：2006-04-14
CPC分类号： C11D3/042 , C11D3/2086 , C11D3/245 , C11D3/28 , C11D3/30 , C11D3/3427 , C11D3/368 , C11D3/43 , C11D7/08 , C11D7/261 , C11D7/30 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D7/36 , C11D11/0047
摘要： A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.
摘要翻译： 描述了用于从致密图案化的微电子器件去除体积和离子注入的光致抗蚀剂和/或蚀刻后残留物的方法和组合物。 该组合物包括共溶剂，螯合剂，任选的离子配对试剂和任选的表面活性剂。 该组合物可以进一步包括稠密的流体。 组合物有效地从微电子器件去除光致抗蚀剂和/或蚀刻后残留物，而基本上不会过度蚀刻下面的含硅层和金属互连材料。
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3.发明申请Apparatus and Method for Supercritical Fluid Removal or Deposition Processes 审中-公开超临界流体去除或沉积过程的设备和方法公开(公告)号：US20080271991A1
公开(公告)日：2008-11-06
申请号：US11911615
申请日：2006-04-17
IPC分类号： C23C14/00
CPC分类号： C23C18/00 , B08B7/0021 , G03F7/422 , G03F7/427 , H01L21/02101
摘要： A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably includes a dynamic mixer to ensure homogeneous mixing of the SCF and other chemical components.
摘要翻译： 一种用于将薄膜沉积到微电子器件上的连续流超临界流体（SCF）装置和方法，或从其上具有相同的微电子装置去除不想要的层，颗粒和/或残余物。 SCF设备优选地包括动态混合器以确保SCF和其它化学组分的均匀混合。
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4.发明申请Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices 有权用于从微电子器件清洗离子注入光刻胶层的配方公开(公告)号：US20080269096A1
公开(公告)日：2008-10-30
申请号：US11911616
申请日：2006-04-14
IPC分类号： G03F7/42
CPC分类号： C11D3/042 , C11D3/2086 , C11D3/245 , C11D3/28 , C11D3/30 , C11D3/3427 , C11D3/368 , C11D3/43 , C11D7/08 , C11D7/261 , C11D7/30 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D7/36 , C11D11/0047
摘要： A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.
摘要翻译： 描述了用于从致密图案化的微电子器件去除体积和离子注入的光致抗蚀剂和/或蚀刻后残留物的方法和组合物。 该组合物包括共溶剂，螯合剂，任选的离子配对试剂和任选的表面活性剂。 该组合物可以进一步包括稠密的流体。 组合物有效地从微电子器件去除光致抗蚀剂和/或蚀刻后残留物，而基本上不会过度蚀刻下面的含硅层和金属互连材料。
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5.发明申请DENSE FLUID COMPOSITIONS FOR REMOVAL OF HARDENED PHOTORESIST, POST-ETCH RESIDUE AND/OR BOTTOM ANTI-REFLECTIVE COATING 审中-公开用于去除硬化光催化剂，去除后残留物和/或底部抗反射涂层的DENSE流体组合物公开(公告)号：US20090192065A1
公开(公告)日：2009-07-30
申请号：US11917654
申请日：2006-06-16
IPC分类号： G03F7/42
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/08 , C11D7/264 , C11D7/265 , C11D7/32 , C11D7/34 , C11D7/5004 , G03F7/425 , G03F7/426 , H01L21/02063
摘要： A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device.
摘要翻译： 描述了用于从微电子器件去除硬化的光致抗蚀剂，蚀刻后光致抗蚀剂和/或底部抗反射涂层的方法和组合物。 组合物可以包括致密流体，例如超临界流体，以及包含共溶剂，任选的氟化物源和任选的酸的致密流体浓缩物。 致密的流体组合物在随后的处理之前基本上从微电子器件去除污染的残余物和/或层，从而改善微电子器件的形态，性能，可靠性和产量。
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6.发明申请Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon 有权用于回收具有低K电介质材料的半导体晶片的组合物和方法公开(公告)号：US20080261847A1
公开(公告)日：2008-10-23
申请号：US12093290
申请日：2006-11-09
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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公开(公告)号：US20080125342A1
公开(公告)日：2008-05-29
申请号：US11935838
申请日：2007-11-06
CPC分类号： C11D11/0047 , C11D3/0073 , C11D3/02 , C11D3/042 , C11D3/046 , C11D3/06 , C11D3/08 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/08 , C11D7/3209 , C11D7/3218 , C11D7/3281 , C11D7/5004 , H01L21/02074 , H01L21/02101 , H01L21/31111 , H01L27/10844
摘要： A removal composition and process for removing silicon-containing layers from a microelectronic device having said layers thereon. The removal composition selectively removes layers including, but not limited to, silicon oxide, plasma enhanced tetraethyl orthosilicate (P-TEOS), borophosphosilicate glass (BPSG), plasma enhanced oxide (PEOX), high density plasma oxide (HDP), phosphosilicate glass (PSG), spin-on-dielectrics (SOD), thermal oxide, updoped silicate glass, sacrificial oxides, silicon-containing organic polymers, silicon-containing hybrid organic/inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), hemispherical grain (HSQ), carbon-doped oxide (CDO) glass, and combinations thereof, relative to lower electrode, device substrate, and/or etch stop layer materials.
摘要翻译： 一种去除组合物和从其上具有所述层的微电子器件去除含硅层的方法。 去除组合物选择性地去除层，包括但不限于氧化硅，等离子体增强的原硅酸四乙酯（P-TEOS），硼磷硅酸盐玻璃（BPSG），等离子体增强氧化物（PEOX），高密度等离子体氧化物（HDP），磷硅玻璃 PSG），旋涂电极（SOD），热氧化物，上硅酸盐玻璃，牺牲氧化物，含硅有机聚合物，含硅杂化有机/无机材料，有机硅酸盐玻璃（OSG），TEOS，氟化硅酸盐玻璃 ），半球形颗粒（HSQ），碳掺杂氧化物（CDO）玻璃及其组合，相对于下电极，器件衬底和/或蚀刻停止层材料。
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8.发明授权Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon 有权用于回收其上具有低k电介质材料的半导体晶片的组合物和方法公开(公告)号：US07960328B2
公开(公告)日：2011-06-14
申请号：US12093290
申请日：2006-11-09
IPC分类号： C11D7/32
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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9.发明授权Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon 有权用于回收其上具有低k电介质材料的半导体晶片的组合物和方法公开(公告)号：US08642526B2
公开(公告)日：2014-02-04
申请号：US13103536
申请日：2011-05-09
IPC分类号： G03F7/42
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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10.发明申请COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS HAVING LOW-K DIELECTRIC MATERIALS THEREON 有权用于回收具有低K介电材料的半导体波长的组合物和方法公开(公告)号：US20110275164A1
公开(公告)日：2011-11-10
申请号：US13103536
申请日：2011-05-09
IPC分类号： H01L21/306 , C09K13/06
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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