Electromigration resistant via-to-line interconnect

Invention Grant

US08114768B2 Electromigration resistant via-to-line interconnect 有权

Title translation: 防电互连线路互连

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Patent Title: Electromigration resistant via-to-line interconnect
Patent Title (中): 防电互连线路互连
Application No.: US12344838

Application Date: 2008-12-29
Publication No.: US08114768B2

Publication Date: 2012-02-14
Inventor: Baozhen Li , Paul S. McLaughlin , Timothy D. Sullivan
Applicant: Baozhen Li , Paul S. McLaughlin , Timothy D. Sullivan
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Scully, Scott, Murphy & Presser, P.
Agent Richard M. Kotulak, Esq.
Main IPC: H01L21/4763
IPC: H01L21/4763

Electromigration resistant via-to-line interconnect

Abstract:

A liner-to-liner direct contact is formed between an upper metallic liner of a conductive via and a lower metallic liner of a metal line below. The liner-to-liner contact impedes abrupt electromigration failures and enhances electromigration resistance of the metal interconnect structure. The at least one dielectric material portion may include a plurality of dielectric material portions arranged to insure direct contact of between the upper metallic liner and the lower metallic liner. Alternatively, the at least one dielectric material portion may comprise a single dielectric portion of which the area has a sufficient lateral overlap with the area of the conductive via to insure that a liner-to-liner direct contact is formed within the range of allowed lithographic overlay variations.

Abstract(Chinese):

在导电通孔的上金属衬套和下面的金属线的下金属衬垫之间形成衬管到衬垫直接接触。衬套到衬垫接触件阻止突然的电迁移故障并增强金属互连结构的电迁移阻力。所述至少一个电介质材料部分可以包括多个电介质材料部分，其布置成确保上金属衬垫和下金属衬垫之间的直接接触。或者，所述至少一个介电材料部分可以包括单个电介质部分，其中该区域具有与导电通孔的面积的足够的横向重叠，以确保在允许的光刻的范围内形成衬管到衬垫的直接接触重叠变化。

Public/Granted literature

US20100164116A1 ELECTROMIGRATION RESISTANT VIA-TO-LINE INTERCONNECT Public/Granted day:2010-07-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）