Invention Grant
US08115235B2 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
有权
量子阱场效应晶体管中的调制掺杂晕，其制造的装置及其使用方法
- Patent Title: Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
- Patent Title (中): 量子阱场效应晶体管中的调制掺杂晕，其制造的装置及其使用方法
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Application No.: US12378828Application Date: 2009-02-20
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Publication No.: US08115235B2Publication Date: 2012-02-14
- Inventor: Ravi Pillarisetty , Titash Rakshit , Mantu Hudait , Marko Radosavljevic , Gilbert Dewey , Benjamin Chu-Kung
- Applicant: Ravi Pillarisetty , Titash Rakshit , Mantu Hudait , Marko Radosavljevic , Gilbert Dewey , Benjamin Chu-Kung
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent John N. Greaves
- Main IPC: H01L31/06
- IPC: H01L31/06
Abstract:
A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device includes InGaAs bottom and top barrier layers respectively below and above the QW layer. The semiconductive device also includes a high-k gate dielectric layer that sits on the InP spacer first layer in a gate recess. A process of forming the QW layer includes using an off-cut semiconductive substrate.
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