发明授权
US08115235B2 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
有权
量子阱场效应晶体管中的调制掺杂晕，其制造的装置及其使用方法
- 专利标题： Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
- 专利标题（中）： 量子阱场效应晶体管中的调制掺杂晕，其制造的装置及其使用方法
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申请号： US12378828申请日： 2009-02-20
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公开(公告)号： US08115235B2公开(公告)日： 2012-02-14
- 发明人: Ravi Pillarisetty , Titash Rakshit , Mantu Hudait , Marko Radosavljevic , Gilbert Dewey , Benjamin Chu-Kung
- 申请人： Ravi Pillarisetty , Titash Rakshit , Mantu Hudait , Marko Radosavljevic , Gilbert Dewey , Benjamin Chu-Kung
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 John N. Greaves
- 主分类号： H01L31/06
- IPC分类号： H01L31/06
摘要：
A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device includes InGaAs bottom and top barrier layers respectively below and above the QW layer. The semiconductive device also includes a high-k gate dielectric layer that sits on the InP spacer first layer in a gate recess. A process of forming the QW layer includes using an off-cut semiconductive substrate.
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