发明授权
- 专利标题： Silicon dioxide cantilever support and method for silicon etched structures
- 专利标题（中）： 二氧化硅悬臂支撑和硅蚀刻结构的方法
-
申请号： US13208098申请日： 2011-08-11
-
公开(公告)号： US08115272B2公开(公告)日： 2012-02-14
- 发明人: Walter B. Meinel , Kalin V. Lazarov , Brian E. Goodlin
- 申请人： Walter B. Meinel , Kalin V. Lazarov , Brian E. Goodlin
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/70
- IPC分类号： H01L21/70
摘要：
An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.
公开/授权文献
信息查询
IPC分类:
