发明授权
US08116110B1 Array architecture including mirrored segments for nonvolatile memory device 有权
阵列架构包括用于非易失性存储器件的镜像段

Array architecture including mirrored segments for nonvolatile memory device
摘要:
A memory device including nonvolatile memory cells arrayed in a first direction and in a second direction, a plurality of first lines extending in the first direction for coupling memory cells arrayed in the first direction, and a plurality of second lines extending in the second direction for coupling memory cells arrayed in the second direction. The memory device includes a plurality of decoders, including i) first decoders coupled to the first lines and ii) second decoders coupled to the second lines, for accessing any one or more of the memory cells in any order. The memory device includes a plurality of segments. Each segment includes different ones of the nonvolatile memory cells. A first one of the segments is juxtaposed to, in the second direction, a second one of the segments. The second one of the segments mirrors, in the second direction, the first one of the segments.
信息查询
0/0