发明授权
- 专利标题: Method for manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12696142申请日: 2010-01-29
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公开(公告)号: US08119313B2公开(公告)日: 2012-02-21
- 发明人: Katsutoshi Kobayashi , Daizo Muto , Koutarou Sho , Tsukasa Azuma
- 申请人: Katsutoshi Kobayashi , Daizo Muto , Koutarou Sho , Tsukasa Azuma
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2009-053337 20090306
- 主分类号: G03C5/00
- IPC分类号: G03C5/00
摘要:
A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer.A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.
公开/授权文献
- US20100227262A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2010-09-09
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