发明授权
US08119472B2 Silicon device on Si:C SOI and SiGe and method of manufacture
有权
Si：C SOI和SiGe上的硅器件及其制造方法
- 专利标题： Silicon device on Si:C SOI and SiGe and method of manufacture
- 专利标题（中）： Si：C SOI和SiGe上的硅器件及其制造方法
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申请号： US11757883申请日： 2007-06-04
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公开(公告)号： US08119472B2公开(公告)日： 2012-02-21
- 发明人: Dureseti Chidambarrao , Omer H. Dokumaci , Oleg G. Gluschenkov
- 申请人： Dureseti Chidambarrao , Omer H. Dokumaci , Oleg G. Gluschenkov
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Ian D. MacKinnon
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.
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