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发明授权
US08119478B2 Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same 有权
具有直径控制触点的多位相变随机存取存储器（PRAM）及其制造和编程方法

Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same
摘要：
A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.
摘要（中）：

相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。 第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。 第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。 硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。 硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。

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