发明授权
- 专利标题： Semiconductor substrate fabrication by etching of a peeling layer
- 专利标题（中）： 通过蚀刻剥离层制造半导体衬底
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申请号： US12064584申请日： 2006-08-24
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公开(公告)号： US08119499B2公开(公告)日： 2012-02-21
- 发明人: Takafumi Yao , Meoung-Whan Cho
- 申请人： Takafumi Yao , Meoung-Whan Cho
- 申请人地址： JP Sendai-shi, Miyagi-ken JP Tokyo JP Tokyo JP Tokyo KR Gumi, Gyungsangbuk-do KR Yongin, Gyeonggi-do
- 专利权人： Tohoku Techno Arch Co., Ltd.,Furukawa Co., Ltd.,Mitsubishi Chemical Corporation,Dowa Holdings Co., Ltd.,Epivalley Co., Ltd.,Wavesquare Inc.
- 当前专利权人： Tohoku Techno Arch Co., Ltd.,Furukawa Co., Ltd.,Mitsubishi Chemical Corporation,Dowa Holdings Co., Ltd.,Epivalley Co., Ltd.,Wavesquare Inc.
- 当前专利权人地址： JP Sendai-shi, Miyagi-ken JP Tokyo JP Tokyo JP Tokyo KR Gumi, Gyungsangbuk-do KR Yongin, Gyeonggi-do
- 代理机构： Cowan, Liebowitz & Latman, P.C.
- 优先权： JP2005-244021 20050825
- 国际申请： PCT/JP2006/316635 WO 20060824
- 国际公布： WO2007/023911 WO 20070301
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/46 ; H01L21/36
摘要：
A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer.
公开/授权文献
- US20080299746A1 Semiconductor Substrate Fabrication Method 公开/授权日：2008-12-04
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