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    Device manufacturing method
    2.
    发明授权
    Device manufacturing method 有权
    器件制造方法

    公开(公告)号：US07906409B2

    公开(公告)日：2011-03-15

    申请号：US12405696

    申请日：2009-03-17

    申请人： Takafumi Yao ,  Meoung-Whan Cho

    发明人： Takafumi Yao ,  Meoung-Whan Cho

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/20

    摘要： A device manufacturing method includes a buffer layer forming step of forming a buffer layer on an underlying substrate, a mask pattern forming step of forming, on the buffer layer, a mask pattern which partially covers the buffer layer, a growth step of growing a group III nitride crystal from regions exposed by the mask pattern on the surface of the buffer layer, thereby forming a structure in which a plurality of crystal members are arranged with gaps therebetween so as to partially cover the buffer layer and the mask pattern, a channel forming step of forming a channel, to supply a second etchant for the buffer layer to the buffer layer, by selectively etching the mask pattern using a first etchant for the mask pattern, and a separation step of separating the plurality of crystal members from the underlying substrate and separating the plurality of crystal members from each other by supplying the second etchant to the buffer layer through the gaps and the channel and selectively etching the buffer layer.

    摘要翻译： 一种器件制造方法，包括在下层基板上形成缓冲层的缓冲层形成步骤，在缓冲层上形成部分覆盖缓冲层的掩模图案的掩模图形形成步骤， III型氮化物晶体由缓冲层表面上的掩模图案露出的区域形成，从而形成多个晶体构件之间间隙地排列的结构，以部分地覆盖缓冲层和掩模图案，形成沟道 形成通道的步骤，通过使用用于掩模图案的第一蚀刻剂选择性地蚀刻掩模图案，以及将多个晶体构件与下面的衬底分离的分离步骤，将缓冲层的第二蚀刻剂提供给缓冲层 以及通过将所述第二蚀刻剂通过所述间隙和所述通道向所述缓冲层提供第二蚀刻剂，并且选择性地将所述多个晶体构件分离 清洗缓冲层。

    METHOD FOR GROWTH OF GaN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GaN SUBSTRATE, PROCESS FOR PRODUCING GaN-BASED ELEMENT, AND GaN-BASED ELEMENT
    3.
    发明申请
    METHOD FOR GROWTH OF GaN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GaN SUBSTRATE, PROCESS FOR PRODUCING GaN-BASED ELEMENT, AND GaN-BASED ELEMENT 有权
    GaN单晶的生长方法，GaN衬底的制备方法，用于生产GaN基元件的工艺和基于GaN的元件

    公开(公告)号：US20100009516A1

    公开(公告)日：2010-01-14

    申请号：US12545575

    申请日：2009-08-21

    申请人： Takafumi Yao ,  Meoung-Whan Cho

    发明人： Takafumi Yao ,  Meoung-Whan Cho

    IPC分类号： H01L21/82

    CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02614 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

    摘要： A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.

    摘要翻译： 使用在基板上生长的金属缓冲层来生长GaN基薄膜（厚膜）。 （a）由例如Cr或Cu制成的金属缓冲层（210）气相沉积在蓝宝石衬底（120）上。 （b）通过在蓝宝石衬底（120）上气相沉积金属缓冲层（210）而获得的衬底在氨气环境中氮化，从而形成金属氮化物层（212）。 （c）在氮化金属缓冲层（210,212）上生长GaN缓冲层（222）。 （d）最后，生长GaN单晶层（220）。 根据目的，该GaN单晶层（220）可以生长成具有各种厚度。 可以通过对通过上述步骤制造的衬底的选择性化学蚀刻来制造独立的衬底。 还可以使用由上述步骤制造的衬底作为用于制造GaN基发光二极管或激光二极管的GaN模板衬底。

    Group III nitride semiconductor and a manufacturing method thereof
    4.
    发明授权
    Group III nitride semiconductor and a manufacturing method thereof 有权
    III族氮化物半导体及其制造方法

    公开(公告)号：US08216869B2

    公开(公告)日：2012-07-10

    申请号：US12230284

    申请日：2008-08-27

    申请人： Takafumi Yao ,  Meoung-Whan Cho ,  Ryuichi Toba

    发明人： Takafumi Yao ,  Meoung-Whan Cho ,  Ryuichi Toba

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02664 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262

    摘要： A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 μm nor more than 10 μm on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer.

    摘要翻译： III族氮化物半导体的制造方法包括以下步骤：在AlN模板衬底或AlN单晶衬底上沉积金属层，所述AlN单晶衬底通过沉积厚度不小于0.1μm不大于10的AlN单晶层而形成 在由蓝宝石，SiC和Si中的任一个制成的基板上; 通过在氨的混合气体气氛下对所述金属层进行加热氮化处理，形成具有多个大致三角锥形或三角形梯形微晶的金属氮化物层; 以及在所述金属氮化物层上沉积III族氮化物半导体层。

    Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
    5.
    发明授权
    Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element 有权
    GaN单晶的生长方法，GaN衬底的制备方法，GaN系元素的制造方法以及GaN系元素

    公开(公告)号：US08124504B2

    公开(公告)日：2012-02-28

    申请号：US12691411

    申请日：2010-01-21

    申请人： Takafumi Yao ,  Meoung-Whan Cho

    发明人： Takafumi Yao ,  Meoung-Whan Cho

    IPC分类号： H01L21/20

    CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02614 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

    摘要： A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.

    摘要翻译： 使用在基板上生长的金属缓冲层来生长GaN基薄膜（厚膜）。 （a）由例如Cr或Cu制成的金属缓冲层（210）气相沉积在蓝宝石衬底（120）上。 （b）通过在蓝宝石衬底（120）上气相沉积金属缓冲层（210）而获得的衬底在氨气环境中氮化，从而形成金属氮化物层（212）。 （c）在氮化金属缓冲层（210,212）上生长GaN缓冲层（222）。 （d）最后，生长GaN单晶层（220）。 根据目的，该GaN单晶层（220）可以生长成具有各种厚度。 可以通过对通过上述步骤制造的衬底的选择性化学蚀刻来制造独立的衬底。 还可以使用由上述步骤制造的衬底作为用于制造GaN基发光二极管或激光二极管的GaN模板衬底。

    Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
    6.
    发明授权
    Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element 有权
    GaN单晶的生长方法，GaN衬底的制备方法，GaN系元素的制造方法以及GaN系元素

    公开(公告)号：US07829435B2

    公开(公告)日：2010-11-09

    申请号：US12545575

    申请日：2009-08-21

    申请人： Takafumi Yao ,  Meoung-Whan Cho

    发明人： Takafumi Yao ,  Meoung-Whan Cho

    IPC分类号： H01L21/30

    CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02614 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

    摘要： A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.

    摘要翻译： 使用在基板上生长的金属缓冲层来生长GaN基薄膜（厚膜）。 （a）由例如Cr或Cu制成的金属缓冲层（210）气相沉积在蓝宝石衬底（120）上。 （b）通过在蓝宝石衬底（120）上气相沉积金属缓冲层（210）而获得的衬底在氨气环境中氮化，从而形成金属氮化物层（212）。 （c）在氮化金属缓冲层（210,212）上生长GaN缓冲层（222）。 （d）最后，生长GaN单晶层（220）。 根据目的，该GaN单晶层（220）可以生长成具有各种厚度。 可以通过对通过上述步骤制造的衬底的选择性化学蚀刻来制造独立的衬底。 还可以使用由上述步骤制造的衬底作为用于制造GaN基发光二极管或激光二极管的GaN模板衬底。

    P-type contact electrode device and light-emitting device
    10.
    发明授权
    P-type contact electrode device and light-emitting device 失效
    P型接触电极器件和发光器件

    公开(公告)号：US06664570B1

    公开(公告)日：2003-12-16

    申请号：US09535044

    申请日：2000-03-27

    申请人： Takafumi Yao ,  Meoung-Whan Cho

    发明人： Takafumi Yao ,  Meoung-Whan Cho

    IPC分类号： H01L2715

    CPC分类号： H01L33/28 ,  H01L33/14 ,  H01L33/40

    摘要： A p-type contact electrode device in a ZnSe-based II-VI compound semiconductor, which electrode device uses, as a contact layer, a BeTe layer having a high p-type doping and a low lattice mismatching with a GaAs substrate to prevent oxidation in air. The device 2 includes a contact layer 5 composed of p-BeTe and a cap layer 4 is composed of p-ZnSe. The cap layer 4 is positioned on the contact layer 5 and an electrode 3 sits atop the cap layer. Preferably, the thickness of the cap layer is 30 to 70 Å and the electrode is composed of gold or gold is dispersed in the cap layer.

    摘要翻译： 作为接触层的ZnSe系II-VI族化合物半导体中的p型接触电极器件，具有高p型掺杂的BeTe层和与GaAs衬底的低晶格失配以防止氧化 在空气中 器件2包括由p-BeTe构成的接触层5和由p-ZnSe构成的覆盖层4。 盖层4位于接触层5上，电极3位于盖层顶部。 优选地，盖层的厚度为30至70埃，电极由金或金分散在盖层中。