Invention Grant
- Patent Title: Quantum dot electroluminescent device and method for fabricating the same
- Patent Title (中): 量子点电致发光器件及其制造方法
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Application No.: US12534226Application Date: 2009-08-03
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Publication No.: US08120010B2Publication Date: 2012-02-21
- Inventor: Kyung Sang Cho , Byoung Lyong Choi , Eun Kyung Lee
- Applicant: Kyung Sang Cho , Byoung Lyong Choi , Eun Kyung Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2008-0109480 20081105
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00

Abstract:
A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface.
Public/Granted literature
- US20100108984A1 QUANTUM DOT ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-05-06
Information query
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