发明授权
- 专利标题: Resonant structure comprising wire and resonant tunneling transistor
- 专利标题(中): 谐振结构包括有线和谐振隧穿晶体管
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申请号: US12357681申请日: 2009-01-22
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公开(公告)号: US08120015B2公开(公告)日: 2012-02-21
- 发明人: Yun-Kwon Park , Sung-Woo Hwang , Jea-Shik Shin , Byeoung-Ju Ha , Jae-Sung Rieh , In-Sang Song , Yong-Kyu Kim , Byeong-Kwon Ju , Hee-Tae Kim
- 申请人: Yun-Kwon Park , Sung-Woo Hwang , Jea-Shik Shin , Byeoung-Ju Ha , Jae-Sung Rieh , In-Sang Song , Yong-Kyu Kim , Byeong-Kwon Ju , Hee-Tae Kim
- 申请人地址: KR Suwon-si KR Seoul
- 专利权人: Samsung Electronics Co., Ltd.,Korea University Industrial and Academic Collaboration Foundation
- 当前专利权人: Samsung Electronics Co., Ltd.,Korea University Industrial and Academic Collaboration Foundation
- 当前专利权人地址: KR Suwon-si KR Seoul
- 代理机构: NSIP Law
- 优先权: KR10-2008-0007186 20080123
- 主分类号: H01L29/06
- IPC分类号: H01L29/06
摘要:
A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.
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