发明授权
US08120015B2 Resonant structure comprising wire and resonant tunneling transistor 有权
谐振结构包括有线和谐振隧穿晶体管

Resonant structure comprising wire and resonant tunneling transistor
摘要:
A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.
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