Invention Grant
- Patent Title: Nitride semiconductor substrate and method of fabricating the same
- Patent Title (中): 氮化物半导体衬底及其制造方法
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Application No.: US12585109Application Date: 2009-09-03
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Publication No.: US08120059B2Publication Date: 2012-02-21
- Inventor: Kazutoshi Watanabe , Takehiro Yoshida
- Applicant: Kazutoshi Watanabe , Takehiro Yoshida
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-269880 20081020
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L21/311
Abstract:
A nitride semiconductor substrate includes a front surface, a rear surface on an opposite side to the front surface, and a first edge portion including a chamfered edge on the front surface. A ratio of an average surface roughness of the front surface to an average surface roughness of the first edge portion is not more than 0.01.
Public/Granted literature
- US20100096728A1 Nitride semiconductor sustrate and method of fabricating the same. Public/Granted day:2010-04-22
Information query
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