发明授权
- 专利标题： Air gap interconnect structures and methods for forming the same
- 专利标题（中）： 气隙互连结构及其形成方法
-
申请号： US12615354申请日： 2009-11-10
-
公开(公告)号： US08120179B2公开(公告)日： 2012-02-21
- 发明人: Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
- 申请人： Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.
公开/授权文献
信息查询
IPC分类:
