发明授权
US08120182B2 Integrated circuit comprising conductive lines and contact structures and method of manufacturing an integrated circuit 有权
包括导线和接触结构的集成电路以及制造集成电路的方法

Integrated circuit comprising conductive lines and contact structures and method of manufacturing an integrated circuit
摘要:
An integrated circuit comprises a first conductive lines and second lines as well as contact structures being in contact with the first and second conductive lines. The first conductive lines are arranged in a first metallization level, and second conductive lines are arranged in a second metallization level arranged above the first metallization level. The second conductive lines are arranged above the contact structures, and a pitch of neighboring contact structures is equal to a pitch of neighboring second conductive lines. The distance between neighboring contact structures is smaller than 100 nm.
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