发明授权
US08120948B2 Data writing method for magnetoresistive effect element and magnetic memory
有权
磁阻效应元件和磁存储器的数据写入方法
- 专利标题: Data writing method for magnetoresistive effect element and magnetic memory
- 专利标题(中): 磁阻效应元件和磁存储器的数据写入方法
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申请号: US12561495申请日: 2009-09-17
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公开(公告)号: US08120948B2公开(公告)日: 2012-02-21
- 发明人: Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
- 申请人: Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-246719 20080925
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
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