发明授权
US08120948B2 Data writing method for magnetoresistive effect element and magnetic memory 有权
磁阻效应元件和磁存储器的数据写入方法

Data writing method for magnetoresistive effect element and magnetic memory
摘要:
A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
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