发明授权
- 专利标题： Nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US12610703申请日： 2009-11-02
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公开(公告)号： US08120961B2公开(公告)日： 2012-02-21
- 发明人: Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi
- 申请人： Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-291140 20081113
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A stacked body with a plurality of dielectric films and electrode films alternately stacked therein is provided. The electrode film is divided into a plurality of control gate electrodes extending in one direction. The stacked body is provided with a U-pillar penetrating through the select gate electrodes and the control gate electrodes, having one end connected to a source line, and having the other end connected to a bit line. Moreover, a different potential is applied to uppermost one of the control gate electrodes than that applied to the other control gate electrodes.
公开/授权文献
- US20100118610A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2010-05-13
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