Invention Grant
US08120980B2 Semiconductor memory device in which a method of controlling a BIT line sense amplifier is improved 有权
提高了控制BIT线读出放大器的方法的半导体存储器件

Semiconductor memory device in which a method of controlling a BIT line sense amplifier is improved
Abstract:
A semiconductor memory device includes a sense amplifier, a sense amplifier driving signal driver, and a controller. The sense amplifier is configured to sense and amplify a signal of a bit line and a signal of a complementary bit line in response to a sense amplifier driving signal. The sense amplifier driving signal driver includes a first driving signal driver configured to drive via a transmission line the sense amplifier driving signal in response to a first sense amplifier control signal, and a second driving signal driver configured to drive via the transmission line the sense amplifier driving signal in response to a second sense amplifier control signal. The controller activates the first sense amplifier control signal in response to an active command, and toggles the second sense amplifier control signal while the first sense amplifier control signal is activated.
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