发明授权
- 专利标题： AG base sputtering target and process for producing the same
- 专利标题（中）： AG基溅射靶及其制造方法
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申请号： US12793257申请日： 2010-06-03
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公开(公告)号： US08123875B2公开(公告)日： 2012-02-28
- 发明人: Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
- 申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
- 申请人地址： JP Kobe-shi JP Kobe-shi
- 专利权人： Kabushiki Kaisha Kobe Seiko Sho,Kobelco Research Institute, Inc.
- 当前专利权人： Kabushiki Kaisha Kobe Seiko Sho,Kobelco Research Institute, Inc.
- 当前专利权人地址： JP Kobe-shi JP Kobe-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2003-275621 20030716
- 主分类号： C23C14/34
- IPC分类号： C23C14/34
摘要：
An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave
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