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公开(公告)号：US08123875B2
公开(公告)日：2012-02-28
申请号：US12793257
申请日：2010-06-03
IPC分类号： C23C14/34
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave
摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave
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公开(公告)号：US07767041B2
公开(公告)日：2010-08-03
申请号：US10844345
申请日：2004-05-13
申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
CPC分类号： C22C5/06 , C23C14/3414
摘要： The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %−1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.
摘要翻译： 由Ag-Bi基合金制成的溅射靶包含Bi的Bi与Ag的固溶体。 溅射靶的沉积Bi强度为0.01at％-1以下，根据X射线衍射的分析结果通过以下数学式（1）计算，和/或预定强度的面积比（ 8个强度的第三至第六强度）为89％以上，其中，通过根据X射线微量分析计算Bi的特征X射线强度的平面分布来获得面积比：沉淀Bi = [IBi（102） / IAg（111）+ IAg（200）+ IAg（220）+ IAg（311））] / [Bi]。 通过使用溅射靶可以抑制所得膜中Bi含量的产率的显着降低。
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3.发明申请公开(公告)号：US20100038233A1
公开(公告)日：2010-02-18
申请号：US12604858
申请日：2009-10-23
申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
CPC分类号： C22C5/06 , C23C14/3414
摘要： The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %−1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89 % or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.
摘要翻译： 由Ag-Bi基合金制成的溅射靶包含Bi的Bi与Ag的固溶体。 溅射靶的沉积Bi强度为0.01at％-1以下，根据X射线衍射的分析结果通过以下数学式（1）计算，和/或预定强度的面积比（ 8个强度的第三至第六强度）为89％以上，其中，通过根据X射线微量分析计算Bi的特征X射线强度的平面分布来获得面积比：沉淀Bi = [IBi（102） / IAg（111）+ IAg（200）+ IAg（220）+ IAg（311））] / [Bi]。 通过使用溅射靶可以抑制所得膜中Bi含量的产率的显着降低。
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公开(公告)号：US20060169577A1
公开(公告)日：2006-08-03
申请号：US10564502
申请日：2004-07-14
IPC分类号： C23C14/00
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave−Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations
摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 <？in-line-formula description =“In-line Formulas”end =“lead”？> A1 =（D ave x100（％）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”B1 =（D＆lt; ave＆lt; /＆gt; -D＆lt; min＆gt;）/ D大于x100（％）<？in-line-formula description = 所有选定位置的粒度D中的最大值D
：粒度范围内的最小值 D在所有选定位置D ：所有选定位置的粒度D的平均值 -
公开(公告)号：US20100264018A1
公开(公告)日：2010-10-21
申请号：US12793257
申请日：2010-06-03
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave
摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave
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公开(公告)号：US07763126B2
公开(公告)日：2010-07-27
申请号：US10564502
申请日：2004-07-14
IPC分类号： C22C1/02
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave−Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations.
摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave-Dmin）/ Dave×100（％）Dmax：所有选择位置的粒径D的最大值Dmin： D在所有选定的位置Dave：所有选定位置的粒度D的平均值。
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公开(公告)号：US20100065425A1
公开(公告)日：2010-03-18
申请号：US12625022
申请日：2009-11-24
CPC分类号： C23C14/3414 , C22C5/06 , C22C5/08
摘要： A silver alloy sputtering target is provided which is useful in forming a thin silver-alloy film of a uniform thickness by the sputtering method. When crystal orientation strengths are determined at four arbitrary positions by the X-ray diffraction method, the orientation which exhibits the highest crystal orientation strength (Xa) is the same at the four measurement positions, and variations in strength ratio (Xb/Xa) between the highest crystal orientation strength (Xa) and the second highest crystal orientation strength (Xb) is 20% ore less.
摘要翻译： 提供了通过溅射法形成厚度均匀的薄银合金膜的银合金溅射靶。 当通过X射线衍射法在四个任意位置确定晶体取向强度时，在四个测量位置处具有最高晶体取向强度（Xa）的取向相同，并且强度比（Xb / Xa）在 最高的晶体取向强度（Xa）和第二高的晶体取向强度（Xb）为20％以下。
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公开(公告)号：US20120181172A1
公开(公告)日：2012-07-19
申请号：US13496899
申请日：2010-09-15
CPC分类号： G11B7/266 , C23C14/3414 , G11B2007/24302 , G11B2007/2432
摘要： Disclosed is a metal oxide-metal composite sputtering target which is useful for the formation of a recording layer for an optical information recording medium, said recording layer containing a metal oxide and a metal. Specifically disclosed is a composite sputtering target containing a metal oxide (A) and a metal (B), wherein the maximum value of the circle-equivalent diameter of the metal oxide (A) is controlled to 200 μm or less.
摘要翻译： 公开了一种金属氧化物 - 金属复合溅射靶，其用于形成用于光学信息记录介质的记录层，所述记录层含有金属氧化物和金属。 具体公开了包含金属氧化物（A）和金属（B）的复合溅射靶，其中金属氧化物（A）的圆当量直径的最大值被控制在200μm以下。
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公开(公告)号：US07803238B2
公开(公告)日：2010-09-28
申请号：US11341531
申请日：2006-01-30
申请人： Toshihiro Kugimiya , Katsutoshi Takagi , Hitoshi Matsuzaki , Kotaro Kitashita , Yoichiro Yoneda
发明人： Toshihiro Kugimiya , Katsutoshi Takagi , Hitoshi Matsuzaki , Kotaro Kitashita , Yoichiro Yoneda
IPC分类号： C22C21/00
CPC分类号： C22C1/0416 , B22F2003/248 , B22F2998/10 , B22F2999/00 , C22C21/00 , C23C14/3414 , B22F9/082 , B22F3/1208 , B22F3/15 , B22F3/17 , B22F3/18 , B22F3/24 , B22F2201/02
摘要： An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 μm or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.
摘要翻译： 包含Ni和一种或多种稀土元素的Al基合金溅射靶，其中当纵横比为2.5以上且当量为0.2μm以上的化合物的截面为5.0×10 4 / mm 2以上时， 以2000或更高的放大倍率观察垂直于靶平面的平面。
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10.发明申请公开(公告)号：US20090057140A1
公开(公告)日：2009-03-05
申请号：US12167597
申请日：2008-07-03
CPC分类号： C23C14/3414 , B22F3/15 , C22C5/06 , G11B7/259
摘要： A sputtering target made of an Ag base alloy containing 0.6 to 10.5 atomic % Ta and 2 to 13 atomic % Cu, is characterized in that: when the sputtering surface of the sputtering target is image-analyzed,(1) the ratio of the total area of Ta particles having a circle equivalent diameter of from 10 μm or more to 50 μm or less, to the total area of all Ta particles, is 60% or more, and the average distance between the centers of gravity of Ta particles is from 10 μm or more to 50 μm or less; and(2) the ratio of the total area of Cu particles having a circle equivalent diameter of from 10 μm or more to 50 μm or less, to the total area of all Cu particles, is 70% or more, and the average distance between the centers of gravity is from 60 μm or more to 120 μm or less.
摘要翻译： 由含有0.6〜10.5原子％的Ta和2〜13原子％的Cu的Ag基合金构成的溅射靶的特征在于：对溅射靶的溅射面进行图像分析时，（1） 圆当量直径为10μm以上至50μm以下的Ta粒子与所有Ta粒子的总面积的面积为60％以上，Ta粒子的重心之间的平均距离为 10岁以上至50岁以下; 和（2）圆当量直径为10μm以上至50μm以下的Cu粒子的总面积与所有Cu粒子的总面积的比例为70％以上，平均距离 重心为60mam以上至120m2以下。
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