发明授权
US08124253B2 Tunneling magnetic sensing element including MGO film as insulating barrier layer
有权
隧道磁传感元件包括MGO膜作为绝缘阻挡层
- 专利标题： Tunneling magnetic sensing element including MGO film as insulating barrier layer
- 专利标题（中）： 隧道磁传感元件包括MGO膜作为绝缘阻挡层
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申请号： US12615689申请日： 2009-11-10
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公开(公告)号： US08124253B2公开(公告)日： 2012-02-28
- 发明人: Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
- 申请人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
- 申请人地址： JP Tokyo
- 专利权人： ALPS Electric Co., Ltd.
- 当前专利权人： ALPS Electric Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Brinks Hofer Gilson & Lione
- 优先权： JP2007-126420 20070511; WOPCT/JP2008/058244 20080430
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.
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