发明授权
US08124529B2 Semiconductor device fabricated using a metal microstructure control process
有权
使用金属微结构控制工艺制造的半导体器件
- 专利标题： Semiconductor device fabricated using a metal microstructure control process
- 专利标题（中）： 使用金属微结构控制工艺制造的半导体器件
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申请号： US11421671申请日： 2006-06-01
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公开(公告)号： US08124529B2公开(公告)日： 2012-02-28
- 发明人: Luigi Colombo , James J. Chambers , Mark R. Visokay
- 申请人： Luigi Colombo , James J. Chambers , Mark R. Visokay
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The invention provides a method for manufacturing a semiconductor device that comprises placing a metallic gate layer over a gate dielectric layer where the metallic gate layer has a crystallographic orientation, and re-orienting the crystallographic orientation of the metallic gate layer by subjecting the metallic gate layer to a hydrogen anneal.
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