Invention Grant
US08125013B2 Structure, design structure and method of manufacturing a structure having VIAS and high density capacitors
有权
具有VIAS和高密度电容器结构的结构，设计结构和方法
- Patent Title: Structure, design structure and method of manufacturing a structure having VIAS and high density capacitors
- Patent Title (中): 具有VIAS和高密度电容器结构的结构，设计结构和方法
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Application No.: US12191385Application Date: 2008-08-14
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Publication No.: US08125013B2Publication Date: 2012-02-28
- Inventor: David S. Collins , Kai D. Feng , Zhong-Xiang Ile , Peter J. Lindgren , Robert M. Rassel
- Applicant: David S. Collins , Kai D. Feng , Zhong-Xiang Ile , Peter J. Lindgren , Robert M. Rassel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
A semiconductor structure and design structure includes at least a first trench and a second trench having different depths arranged in a substrate, a capacitor arranged in the first trench, and a via arranged in the second trench.
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