发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12673082申请日: 2008-09-08
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公开(公告)号: US08125088B2公开(公告)日: 2012-02-28
- 发明人: Fumihiko Gejima , Hiroki Sakamoto
- 申请人: Fumihiko Gejima , Hiroki Sakamoto
- 申请人地址: JP Yokohama-shi, Kanagawa
- 专利权人: Nissan Motor Co., Ltd.
- 当前专利权人: Nissan Motor Co., Ltd.
- 当前专利权人地址: JP Yokohama-shi, Kanagawa
- 代理机构: Young Basile
- 优先权: JP2007-240073 20070914; JP2008-124703 20080512
- 国际申请: PCT/IB2008/002370 WO 20080908
- 国际公布: WO2009/034454 WO 20090319
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
Embodiments of the invention provide a semiconductor device having high reliability as they ease the thermal stress or a heat distortion or strain occurring during the manufacturing process or during operation, and the embodiments function with stability for a long time. A semiconductor device has a semiconductor substrate, an insulating ceramic plate on which the semiconductor substrate is mounted and stress buffer 40 that eases a thermal stress. The stress buffer is provided between the semiconductor substrate and the insulating ceramic plate and can be provided on a surface of the insulating ceramic plate that is opposite to a surface on which the semiconductor substrate is mounted. The stress buffer is formed from a structure including at least Al and a second phase. The second phase is Al4X where X is at least one element of alkaline earth metal elements.
公开/授权文献
- US20110309512A1 Semiconductor Device 公开/授权日:2011-12-22