Invention Grant
- Patent Title: Power amplifier and bridge circuit in power amplifier
- Patent Title (中): 功率放大器和功率放大器中的桥式电路
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Application No.: US12821968Application Date: 2010-06-23
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Publication No.: US08125271B2Publication Date: 2012-02-28
- Inventor: Lei Zhang , Herb He Huang
- Applicant: Lei Zhang , Herb He Huang
- Applicant Address: CN Shanghai
- Assignee: Shanghai Lexvu Opto Microelectronics Technology Co., Ltd.
- Current Assignee: Shanghai Lexvu Opto Microelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201010114944 20100225
- Main IPC: H03F3/217
- IPC: H03F3/217

Abstract:
A power amplifier and a bridge circuit in a power amplifier, thereinto, the power amplifier includes a comparator, a bridge circuit and a low-pass filter. The comparator is adapted to receive a first analog signal, compare the first analog signal with a reference signal and output a square wave signal. The bridge circuit is adapted to amplify the square wave signal and output the amplified square wave signal. The low-pass filter is adapted to convert the amplified square wave signal into a second analog signal. The bridge circuit includes a first MEMS switch and a second MEMS switch. The first MEMS switch and the second MEMS switch turn on alternately when the polarity of the square wave changes, and output a first voltage signal or a second voltage signal respectively. The amplified square wave signal includes the first voltage signal and the second voltage signal output alternately. The present disclosure substitutes the MOS transistors in prior art with surface MEMS switches, so the power consumption, the size of devices and the manufacture costs all can be reduced.
Public/Granted literature
- US20110204982A1 POWER AMPLIFIER AND BRIDGE CIRCUIT IN POWER AMPLIFIER Public/Granted day:2011-08-25
Information query
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