Invention Grant
- Patent Title: Current perpendicular to plane magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device
- Patent Title (中): 电流垂直于平面磁阻效应元件，磁头和磁记录/再现装置
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Application No.: US12076438Application Date: 2008-03-18
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Publication No.: US08125744B2Publication Date: 2012-02-28
- Inventor: Masayuki Takagishi , Hitoshi Iwasaki , Masahiro Takashita , Michiko Hara , Dan Abels , Xin Li
- Applicant: Masayuki Takagishi , Hitoshi Iwasaki , Masahiro Takashita , Michiko Hara , Dan Abels , Xin Li
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JPP2007-085440 20070328
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm2) is set to 0.00062×√{square root over ((GAP))}×TW+0.06 when a track width of the magneto-resistance effect element is defined as TW (nm) and a gap length of the magneto-resistance effect element is defined as GAP (nm).
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