Invention Grant
- Patent Title: Method of programming variable resistance element and variable resistance memory device using the same
- Patent Title (中): 编程可变电阻元件和使用其的可变电阻存储器件的方法
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Application No.: US12918874Application Date: 2009-02-25
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Publication No.: US08125818B2Publication Date: 2012-02-28
- Inventor: Shunsaku Muraoka , Takeshi Takagi , Kazuhiko Shimakawa
- Applicant: Shunsaku Muraoka , Takeshi Takagi , Kazuhiko Shimakawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2008-042465 20080225
- International Application: PCT/JP2009/000821 WO 20090225
- International Announcement: WO2009/107370 WO 20090903
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A method of programming a variable resistance element to be operated with stability and at a high speed is provided. The method programs a nonvolatile variable resistance element (10) including a variable resistance layer (3), which changes between a high resistance state and a low resistance state depending on a polarity of an applied electric pulse, and a lower electrode (2) and an upper electrode (4). The method includes: writing steps (S11) and (S15) to cause the variable resistance layer (3) to change from the low resistance state to the high resistance state by applying a write voltage pulse; and an erasing step (S13) to cause the variable resistance layer (3) to change from the high resistance state to the low resistance state. In the writing steps, a write voltage pulse is applied between the electrodes so as to satisfy |Vw1|>|Vw| where Vw1 represents a voltage value of the write voltage pulse in the first writing step (S11) after manufacturing the variable resistance element (10) and Vw represents a voltage value of the write voltage pulse in writing steps after the first writing step (S15) after manufacturing the variable resistance element (10).
Public/Granted literature
- US20110002158A1 METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT AND VARIABLE RESISTANCE MEMORY DEVICE USING THE SAME Public/Granted day:2011-01-06
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