发明授权
- 专利标题: Omega shaped nanowire field effect transistors
- 专利标题(中): 欧米茄形纳米线场效应晶体管
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申请号: US12631205申请日: 2009-12-04
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公开(公告)号: US08129247B2公开(公告)日: 2012-03-06
- 发明人: Sarunya Bangsaruntip , Josephine B. Chang , Guy M. Cohen , Jeffrey W. Sleight
- 申请人: Sarunya Bangsaruntip , Josephine B. Chang , Guy M. Cohen , Jeffrey W. Sleight
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire on a semiconductor substrate, forming a first gate structure on a first portion of the nanowire, forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a first source region and a first drain region.
公开/授权文献
- US20110133164A1 Omega Shaped Nanowire Field Effect Transistors 公开/授权日:2011-06-09